Resistive switching in CeO2/La0.8Sr0.2MnO3 bilayer for non-volatile memory applications

1-s2.0-S0167931715002543-fx1

R. Ortega-Hernandez, M. Coll, J. C. Gonzalez-Rosillo, A. Palau, X. Obradors, E. Miranda, T. Puig and J. Suñé

Microelectronic Engineering, 147, 37-40 (2015)

DOI:10.1016/j.mee.2015.04.042

The resistive switching of CeO2−x/La0.8Sr0.2MnO3 bilayer structures has been studied. First, the resistive switching (RS) characteristics of La0.8Sr0.2MnO3 (LSMO) and the CeO2−x layers are studied separately. Then, the bilayer characteristics are analyzed. It has been demonstrated that inserting a thin CeO2−x layer between the LSMO film and the metal electrodes deeply modifies the resistive switching characteristics. The metal–insulator transition of the LSMO layer results from the oxygen diffusion in and out of the film. These effects are enhanced through the introduction of the CeO2−x layer due to the fact it acts as an oxygen reservoir.